Title :
A 2GHz GaN Class-J power amplifier for base station applications
Author :
Mimis, K. ; Morris, K.A. ; McGeehan, J.P.
Author_Institution :
Centre for Commun. Res., Univ. of Bristol, Bristol, UK
Abstract :
The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were available. Following Class-J theory, the needed harmonic terminations at the output of the transistor were defined and realised. Experimental results show good agreement with simulations verifying the class of operation. Efficiency above 70% is demonstrated with an output power of 39.7 dBm at an input drive of 29 dBm. High efficiency is sustained over a bandwidth of 140 MHz.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; GaN HEMT device; base station; class-J power amplifier; extrinsic parasitic model; frequency 2 GHz; large-signal model; power 10 W; Bandwidth; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Power generation; Radio frequency; Gallium compounds; high electron mobility transistors; power amplifiers;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2011 IEEE Topical Conference on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8416-4
Electronic_ISBN :
978-1-4244-8415-7
DOI :
10.1109/PAWR.2011.5725378
