Title :
A 26.5-40.0 GHz GaAs FET Amplifier
Author :
Rosenberg, J. ; Chye, P. ; Haung, Chih-Fang ; Policky, G.
Abstract :
Sub-half-micron gate GaAs FET´s have been used to fabricate a MIC balanced amplifier module with 4.2 dB of minimum gain over 26.5-40.0 GHz. The module and devices are described and data is presented for gain, VSWR, noise figure, and power on the module.
Keywords :
Circuit testing; Coaxial components; FETs; Fixtures; Gallium arsenide; Gold; Microstrip; Noise figure; Optical amplifiers; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130648
