• DocumentCode
    2675720
  • Title

    A 26.5-40.0 GHz GaAs FET Amplifier

  • Author

    Rosenberg, J. ; Chye, P. ; Haung, Chih-Fang ; Policky, G.

  • fYear
    1982
  • fDate
    15-17 June 1982
  • Firstpage
    166
  • Lastpage
    168
  • Abstract
    Sub-half-micron gate GaAs FET´s have been used to fabricate a MIC balanced amplifier module with 4.2 dB of minimum gain over 26.5-40.0 GHz. The module and devices are described and data is presented for gain, VSWR, noise figure, and power on the module.
  • Keywords
    Circuit testing; Coaxial components; FETs; Fixtures; Gallium arsenide; Gold; Microstrip; Noise figure; Optical amplifiers; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1982 IEEE MTT-S International
  • Conference_Location
    Dallas, TX, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1982.1130648
  • Filename
    1130648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675720