XPS investigation of InAs etching in planar inductively coupled plasma

Author

Dultsev, Fedor N. ; Kesler, Valeriy G.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

101

Lastpage

103

Abstract

A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH₄/H₂/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ~18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300degC restore the initial surface stoichiometry.

Keywords

III-V semiconductors; X-ray photoelectron spectra; annealing; indium compounds; organic compounds; plasma materials processing; sputter etching; stoichiometry; surface composition; ICP; InAs; XPS; deep etching; frequency 13.56 MHz; gas phase; hydrocarbon; hydrochloric acid; isopropanol; planar inductively coupled plasma; plasmachemical etching; surface composition; surface stoichiometry; temperature 300 C; vacuum annealing; Chemicals; Dry etching; Hydrocarbons; Infrared detectors; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma temperature; Semiconductor device manufacture; Etching; InAs; Plasma; XPS;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173941

Filename

5173941