DocumentCode :
2675775
Title :
Transient injection currents in PbSnTe:In films
Author :
Ischenko, Denis V. ; Klimov, Alexander E. ; Paschin, Nikolai S. ; Shumsky, Vladimir N.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear :
2009
fDate :
1-6 July 2009
Firstpage :
116
Lastpage :
119
Abstract :
In the present paper, experimental data and an analysis of dark transient injection currents in PbSnTe:In films at helium temperature are presented.
Keywords :
IV-VI semiconductors; dark conductivity; indium; lead compounds; semiconductor thin films; tin compounds; PbSnTe:In; dark currents; films; helium temperature; transient injection currents; Current measurement; Current-voltage characteristics; Electron traps; Helium; Indium; Physics; Steady-state; Temperature measurement; Transient analysis; Voltage; PbSnTe:In; contact injection; transient current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
Type :
conf
DOI :
10.1109/EDM.2009.5173944
Filename :
5173944
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2675775
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