Title :
Modeling of tot al dose radiation effect of RF PD SOI-MOSFET using Sentaurus TCAD
Author :
Krasukov, Anton Y. ; Mansurov, Anton N.
Author_Institution :
Moscow Inst. of Electron. Eng. (MIEE), Moscow, Russia
Abstract :
An investigation of characteristics of partially depleted are - type SOI-MOSFET transistors is performed using Sentaurus TCAD and presented here. It is shown that such devices can operated as amplifiers for the frequencies of above 2 GHz. More over it was found that such devices are stable against influence of collected radiation.
Keywords :
MOSFET; amplifiers; radiation effects; silicon-on-insulator; RF PD SOI-MOSFET transistors; Sentaurus TCAD; Si; amplifiers; dose radiation effect; Circuit simulation; Integrated circuit layout; Leakage current; MOSFET circuits; Performance gain; Radiation effects; Radio frequency; Single event upset; Threshold voltage; Very large scale integration; MOSFET; SOI; TCAD simulation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173951
