Title :
Researching of using transistor in cap mode as element of a capacitor-transistor logic
Author :
Nikolaev, Artyom V.
Author_Institution :
MIEE (TU), Moscow, Russia
Abstract :
This paper consider possibility of building complex logic capacitor-transistor devices with using transistor in cap mode (with shorted source and drain) as cap element. Parameters deviations from theoretical values caused by real device influence are obtained with technology device modeling in ISE TCAD.
Keywords :
MOS capacitors; MOSFET; logic gates; technology CAD (electronics); CTL inverter; ISE TCAD; MOS structure; MOS transistor; cap mode; complex logic capacitor-transistor devices; Capacitance; Inverters; Logic devices; MOS capacitors; MOSFETs; Pulse circuits; Pulsed power supplies; Rails; Solid modeling; Voltage; CTL;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173953
