Title :
Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value
Author :
Tikhonov, R.D. ; Kozlov, AV ; Krasukov, AYu ; Polomoshnov, S.A. ; Balashov, AG
Author_Institution :
SMC MIET Technol. Center, Moscow, Russia
Abstract :
The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.
Keywords :
bipolar transistors; diffusion; magnetic devices; diffusion; double-well region structure; dual-collector bipolar magnetotransistor; magnetic sensitivity; numerical modeling; p-well-n-substrate junctions; p-well-n-well junctions; Annealing; CMOS process; Doping; Electron emission; Energy consumption; Linearity; Magnetic devices; Magnetic field measurement; Magnetic sensors; Voltage; Bipolar magnetotransistor; relative current sensitivity;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173954
