Title :
Bipolar magnetotransistor sensitivity dependence on temperature
Author :
Tikhonov, R.D. ; Kozlov, A.V. ; Krasukov, A.Yu. ; Polomoshnov, S.A. ; Balashov, A.G.
Author_Institution :
SMC MIET Technol. Center, Moscow, Russia
Abstract :
Bipolar magnetotransistor absolute magnetic sensitivity dependence on temperature in the range 200-370 K and for magnetic fields under 0.18 T was investigated. The possibility of temperature stabilization of sensitivity by input current control was shown.
Keywords :
bipolar transistors; diffusion; magnetic devices; semiconductor device models; technology CAD (electronics); 2D-simulation; ISE TCAD software; absolute magnetic sensitivity; bipolar magnetotransistor; drift-diffusion model; input current control; temperature 200 K to 370 K; temperature stabilization; Circuits; Magnetic analysis; Magnetic devices; Magnetic field measurement; Magnetic fields; Magnetic sensors; Sensor arrays; Temperature dependence; Temperature distribution; Temperature sensors; Bipolar magnetotransistor; temperature dependence of sensitivity;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173955
