DocumentCode :
2676175
Title :
A 1 Watt GaAs Power Amplifier for the NASA 30/20 Ghz Communication System
Author :
Goel, J. ; Oransky, G. ; S.Yuan ; O´Sullivan, P. ; Burch, J.
fYear :
1982
fDate :
15-17 June 1982
Firstpage :
225
Lastpage :
227
Abstract :
A multistage GaAs FET power amplifier, employing cascaded balanced stages using state-of-the-art 1/4, 1/2, and 1 watt devices, has been developed. A linear gain of 30 dB with 1.25 watts output has been achieved over a 17.7 to 19.4 GHz frequency band. The development and performance of the amplifier and its components are discussed.
Keywords :
Broadband amplifiers; Couplings; FETs; Frequency; Gallium arsenide; NASA; Power amplifiers; Radio spectrum management; Substrates; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1982.1130670
Filename :
1130670
Link To Document :
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