Design of a 0.18-μm CMOS resistive shunt feedback low-noise amplifier for 3.1–10.6-GHz UWB receivers

Author

Guan, X. ; Huynh, C. ; Nguyen, C.

Author_Institution

Broadcom Inc., Irvine, CA, USA

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

A 0.18-μm CMOS low-noise amplifier (LNA) employing resistive shunt feedback, operating over the entire ultra-wideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated and tested. The UWB LNA achieves measured power gain of 7.5±2.5 dB, minimum input matching of -8 dB, noise figure from 3.9 to 6.3 dB, and IIP3 from -8 to -1.9 dBm, while consuming only 9 mW over 3-10 GHz. It occupies only 0.55×0.4 mm² without RF and DC pads. With its simple design, miniature size, and competitive performance, this LNA is expected to be valuable for many wireless CMOS UWB receivers.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; microwave amplifiers; CMOS resistive shunt feedback low-noise amplifier; IIP3; frequency 3.1 GHz to 10.6 GHz; noise figure 3.9 dB to 6.3 dB; size 0.18 mum; ultra-wideband frequency; wireless CMOS UWB receiver; CMOS integrated circuits; Current measurement; Gain; Noise figure; OFDM; Radio frequency; Shunt (electrical);

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6105110

Filename

6105110