Title :
Design of a 0.18-μm CMOS resistive shunt feedback low-noise amplifier for 3.1–10.6-GHz UWB receivers
Author :
Guan, X. ; Huynh, C. ; Nguyen, C.
Author_Institution :
Broadcom Inc., Irvine, CA, USA
Abstract :
A 0.18-μm CMOS low-noise amplifier (LNA) employing resistive shunt feedback, operating over the entire ultra-wideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated and tested. The UWB LNA achieves measured power gain of 7.5±2.5 dB, minimum input matching of -8 dB, noise figure from 3.9 to 6.3 dB, and IIP3 from -8 to -1.9 dBm, while consuming only 9 mW over 3-10 GHz. It occupies only 0.55×0.4 mm2 without RF and DC pads. With its simple design, miniature size, and competitive performance, this LNA is expected to be valuable for many wireless CMOS UWB receivers.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; microwave amplifiers; CMOS resistive shunt feedback low-noise amplifier; IIP3; frequency 3.1 GHz to 10.6 GHz; noise figure 3.9 dB to 6.3 dB; size 0.18 mum; ultra-wideband frequency; wireless CMOS UWB receiver; CMOS integrated circuits; Current measurement; Gain; Noise figure; OFDM; Radio frequency; Shunt (electrical);
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105110
