Title :
GaAs FET Limiting Amplifier Designed for Low AM to PM Conversion
Author :
Baughman, C.R. ; Chin, J.Y.
Abstract :
A 0.5 µm gate length GaAa FET has been characterized for use in a low AM to PM conversion limiting amplifier at 12.0 GHz. A unique linear behavior for FET AM/PM is observed with respect to DC biasing, and its data are presented along with input and output matching information. FET limiting amplifier design techniques and data on a nine-stage amplifier are also reported.
Keywords :
Bandwidth; Circuit noise; Computer simulation; FETs; Gain; Gallium arsenide; Impedance matching; Microwave Theory and Techniques Society; Signal design; Topology;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130686
