Title :
Frequency Doublers with GaAs FET´s
Abstract :
A comprehensive study is presented of single-gate GaAs FET frequency doublers, including self-oscillating doublers, focusing specifically on their applicability to mm-wave power generation. Large-signal simulations are used to identify critical design aspects; with three experimental circuits substantiating the assumptions and predictions.
Keywords :
Circuit simulation; FETs; Feedback; Frequency conversion; Gallium arsenide; Laboratories; Microwave oscillators; Power generation; Radio frequency; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130690
