Title :
A 45 GHz GaAs FET MIC Oscillator-Doubler
Author :
Saito, T. ; Iwakuni, M. ; Sakane, T. ; Tokumitsu, Y.
Abstract :
A 45 GHz MIC oscillator-doubler usinq the gate-to-drain nonlinearity of a common-drain GaAs FET has been investigated . This oscillator-doubler has a hiqh output power of 11.6 dBm, a high doubler efficiency of 9 dB and a high power efficiency of 1.6%.
Keywords :
Dielectrics; Frequency; Gallium arsenide; Impedance; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Power generation; Power system harmonics; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130691
