Title :
X-Band Burnout Characteristics Of GaAs MESFETS
Author :
Whalen, J.J. ; Kemerley, R.T.
Abstract :
X-Band microsecond pulse, millisecond pulse, and CW burnout data have been measured for GaAs MESFETs. Values of incident pulse power required to cause burn-out are presented and discussed.
Keywords :
Bonding; Gallium arsenide; Laboratories; MESFETs; Microwave devices; Noise figure; Power system protection; Pulse amplifiers; Pulse measurements; Radar antennas;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130692
