Title :
Monolithic Microwave Integrated GaAs FET Oscillators
Author :
Ye Yukang ; Wang Fuchen
Abstract :
The analysis by means of three-port S-parameters shows that larger output power can be obtained from GaAa MESFET oscillator at their source ports rather than at their drains. An output power of 40 mW was measured at 8.2 GHz on a finished monolithic oscillator with 15% efficiency and 300 µm gate-width.
Keywords :
Frequency; Gallium arsenide; Impedance; Inductance; MESFETs; Microwave FETs; Microwave devices; Microwave oscillators; Power generation; Reflection;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130693
