DocumentCode
2676598
Title
Si/SiGe HBT UWB impulse generator tunable to FCC, ECC and Japanese spectral masks
Author
Lin, Dayang ; Schleicher, Bernd ; Trasser, Andreas ; Schumacher, Hermann
Author_Institution
Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
fYear
2011
fDate
16-19 Jan. 2011
Firstpage
66
Lastpage
69
Abstract
In this paper a fully integrated, low power and differential ultra-wide band (UWB) impulse generator is presented. The proposed circuit uses an on-chip generated current spike to shortly switch on an LC oscillator. The configurable current spike width leads to a tunable duration of the generated impulses. The corresponding spectrum has a controllable 10 dB bandwidth thus fitting the spectral allocations in the USA, Europe and Japan. The realized circuit has a low power consumption of 6mW when targeting the FCC mask and of 10mW when targeting the ECC and Japanese masks at 100MHz output impulse repetition rate. This compact design occupies a chip size of 0.32 mm2 including bounding pads.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; pulse generators; ECC spectral masks; FCC spectral masks; HBT UWB impulse generator; Japanese spectral masks; LC oscillator; Si-SiGe; differential ultrawide band impulse generator; frequency 100 MHz; low power impulse generator; on-chip generated current spike; power 10 mW; power 6 mW; Bandwidth; Current measurement; FCC; Frequency measurement; Generators; Oscillators; Transistors; ECC; FCC; Impulse generator; Japanese mask; LC oscillator; Ultra-wide band;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium (RWS), 2011 IEEE
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-7687-9
Type
conf
DOI
10.1109/RWS.2011.5725428
Filename
5725428
Link To Document