DocumentCode :
2676677
Title :
MDAC design for 1.5-bit pipeline stage of high-speed high-resolution ADC
Author :
Guo-Min, Zhang ; Yong-Sheng, Yin ; Hong-Hui, Deng
Author_Institution :
Inst. of VLSI Design, Hefei Univ. of Technol., Hefei, China
Volume :
1
fYear :
2010
fDate :
27-29 March 2010
Firstpage :
456
Lastpage :
459
Abstract :
This paper presents a design of residue amplification circuit (MDAC) used in the first 1.5-bit pipeline stage of an ADC, and the MDAC should meet requirements of a 100MS/s 14-bit pipeline ADC with 1.8V supply voltage. In order to obtain the corresponding performance, the circuits such as operational amplifier and bootstrap circuit are designed which could realize the objective of high-speed and high-resolution. The gain-boost structure is used in the amplifier to obtain the specified resolution, and an optimization between speed and power dissipation should be carefully conducted as a high speed requires a large slew rate or trans-conductance which is proportional to power dissipation. The design is implemented in the 0.18μm CMOS process with 9.6mW power consumption and the simulation results in Spectre illustrate that, the designed operational amplifier could reach the fixed objective and the residue signal of MDAC could set up completely in the specified time 3ns.
Keywords :
analogue integrated circuits; analogue-digital conversion; bootstrap circuits; operational amplifiers; CMOS process; MDAC design; bootstrap circuit; high-speed high-resolution ADC; operational amplifier; pipeline stage; power 9.6 mW; power consumption; residue amplification circuit desgin; size 0.18 mum; voltage 1.8 V; word length 1.5 bit; word length 14 bit; CMOS process; Circuits; Energy consumption; High power amplifiers; Operational amplifiers; Pipelines; Power amplifiers; Power dissipation; Signal design; Voltage; MDAC; bootstrap circuit; operational amplifier; pipeline; set up;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Computer Control (ICACC), 2010 2nd International Conference on
Conference_Location :
Shenyang
Print_ISBN :
978-1-4244-5845-5
Type :
conf
DOI :
10.1109/ICACC.2010.5486978
Filename :
5486978
Link To Document :
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