DocumentCode :
26771
Title :
Quantum Confinement and Volume Inversion in 
Model for Short-Channel Tri-Gate MOSFETs
Author :
Kloes, Alexander ; Schwarz, Mathias ; Holtij, Thomas ; Navas, Alvaro
Author_Institution :
Compentence Center Nanoelectron. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
Volume :
60
Issue :
8
fYear :
2013
fDate :
Aug. 2013
Firstpage :
2691
Lastpage :
2694
Abstract :
An efficient way to include the effects of quantum confinement and volume inversion in the MOS3 compact model for lightly doped triple-gate silicon-on-insulator MOSFETs is presented. The model is verified with numerical results based on the nonequilibrium Green´s function formalism. The numerically efficient modeling approach shows a good agreement down to a channel length of 10 nm and silicon fin thickness of 3 nm.
Keywords :
Green´s function methods; MOSFET; numerical analysis; semiconductor device models; silicon-on-insulator; MOS3 compact model; Si; lightly doped triple-gate silicon-on-insulator MOSFET; nonequilibrium Green´s function formalism; quantum confinement; short-channel trigate MOSFET; size 10 nm; size 3 nm; volume inversion; Electric potential; Equations; Logic gates; MOSFET; Mathematical model; Numerical models; Semiconductor device modeling; Compact model; FinFET; MOSFET; quantum; short-channel; triple gate; volume inversion;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2271093
Filename :
6553605
Link To Document :
