• DocumentCode
    267724
  • Title

    Integration of STT-MRAM model into CACTI simulator

  • Author

    Arcaro, S. ; Di Carlo, S. ; Indaco, M. ; Pala, D. ; Prinetto, P. ; Vatajelu, Elena I.

  • Author_Institution
    Dip. di Autom. e Inf., Politec. di Torino, Turin, Italy
  • fYear
    2014
  • fDate
    16-18 Dec. 2014
  • Firstpage
    67
  • Lastpage
    72
  • Abstract
    In the last decade, academies and private companies have actively explored emerging memory technologies. STT-MRAM in particular is experiencing a rapid development but it is facing several challenges in terms of performance and reliability. Several techniques at cell level have been proposed to mitigate such issues but currently few tools and methodologies exist to support designers in evaluating the impact that specific micro-level design choices can determine on the STT-MRAM macro design. In this paper we present a system-level tool based on CACTI simulator to assist memory system designers. We use our tool to generate high-performance and low-power cache memories comparing performance, energy consumption, and area with traditional SRAM.
  • Keywords
    MRAM devices; cache storage; integrated circuit design; integrated circuit reliability; low-power electronics; CACTI simulator; SRAM; STT-MRAM macro design; cell level; energy consumption; high-performance memories; low-power cache memories; memory system designers; memory technologies; microlevel design choices; reliability; spin-transfer torque magnetic random access memory; system-level tool; Arrays; Cache memory; Magnetic tunneling; Random access memory; Resistance; Switches; Transistors; CACTI; Emerging Memories; STT-MRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Test Symposium (IDT), 2014 9th International
  • Conference_Location
    Algiers
  • Type

    conf

  • DOI
    10.1109/IDT.2014.7038589
  • Filename
    7038589