Increasing the bandwidth of planar on-chip THz devices for spectroscopic applications

Author

Russell, C. ; Wood, C.D. ; Dazhang, L. ; Burnett, A.D. ; Li, L.H. ; Linfield, E.H. ; Davies, A.G. ; Cunningham, J.E.

Author_Institution

Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

3

Abstract

We demonstrate an increase in bandwidth, from 600 GHz to 1.5 THz, of planar Goubau-line on-chip devices with integrated low-temperature-grown (LT) GaAs photoconductive (PC) switches, using a substrate-thinning technique. The effect of substrate thinning was investigated both experimentally and theoretically, and the increase in bandwidth then used for spectroscopy of overlaid polycrystalline materials.

Keywords

III-V semiconductors; gallium arsenide; microwave switches; photoconducting switches; planar waveguides; terahertz wave devices; GaAs; frequency 600 GHz to 1.5 THz; integrated low-temperature-grown photoconductive switch; on-chip THz device bandwidth; planar Goubau-line on-chip device; polycrystalline material; spectroscopic application; substrate-thinning technique; Bandwidth; Permittivity; Reflection; Spectroscopy; Substrates; System-on-a-chip; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6105173

Filename

6105173