Title :
Increasing the bandwidth of planar on-chip THz devices for spectroscopic applications
Author :
Russell, C. ; Wood, C.D. ; Dazhang, L. ; Burnett, A.D. ; Li, L.H. ; Linfield, E.H. ; Davies, A.G. ; Cunningham, J.E.
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK
Abstract :
We demonstrate an increase in bandwidth, from 600 GHz to 1.5 THz, of planar Goubau-line on-chip devices with integrated low-temperature-grown (LT) GaAs photoconductive (PC) switches, using a substrate-thinning technique. The effect of substrate thinning was investigated both experimentally and theoretically, and the increase in bandwidth then used for spectroscopy of overlaid polycrystalline materials.
Keywords :
III-V semiconductors; gallium arsenide; microwave switches; photoconducting switches; planar waveguides; terahertz wave devices; GaAs; frequency 600 GHz to 1.5 THz; integrated low-temperature-grown photoconductive switch; on-chip THz device bandwidth; planar Goubau-line on-chip device; polycrystalline material; spectroscopic application; substrate-thinning technique; Bandwidth; Permittivity; Reflection; Spectroscopy; Substrates; System-on-a-chip; Transmission line measurements;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105173
