DocumentCode :
2677372
Title :
GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K
Author :
Adams, R.W. ; Vijayraghavan, K. ; Wang, Q.J. ; Fan, J. ; Capasso, F. ; Khanna, S.P. ; Li, L. ; Davies, A.G. ; Linfield, E.H. ; Belkin, Mikhail A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report the design and performance of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation and a vertical lasing transition. Lasing at 3 THz was observed up to a heat-sink temperature of 172 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical design techniques; phonon-phonon interactions; quantum cascade lasers; GaAs-Al0.15Ga0.85As; bandwidth 3 THz; double-phonon resonant depopulation; heat sink temperature; laser design; quantum cascade lasers; temperature 172 K; vertical lasing transition; Educational institutions; Gallium arsenide; Metals; Phonons; Quantum cascade lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6105176
Filename :
6105176
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2677372
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