• DocumentCode
    2677372
  • Title

    GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K

  • Author

    Adams, R.W. ; Vijayraghavan, K. ; Wang, Q.J. ; Fan, J. ; Capasso, F. ; Khanna, S.P. ; Li, L. ; Davies, A.G. ; Linfield, E.H. ; Belkin, Mikhail A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the design and performance of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation and a vertical lasing transition. Lasing at 3 THz was observed up to a heat-sink temperature of 172 K.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical design techniques; phonon-phonon interactions; quantum cascade lasers; GaAs-Al0.15Ga0.85As; bandwidth 3 THz; double-phonon resonant depopulation; heat sink temperature; laser design; quantum cascade lasers; temperature 172 K; vertical lasing transition; Educational institutions; Gallium arsenide; Metals; Phonons; Quantum cascade lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6105176
  • Filename
    6105176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2677372