DocumentCode :
2677415
Title :
Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions
Author :
Denisova, Elena A. ; Khainovskii, Vladimir I. ; Uzdovskii, Valerii V.
Author_Institution :
Moscow State Inst. of Electron. Technol., Moscow, Russia
fYear :
2009
fDate :
1-6 July 2009
Firstpage :
391
Lastpage :
394
Abstract :
Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.
Keywords :
optical receivers; p-n junctions; photoelectric cells; ISE TCAD program; bulk integrated p-n-junctions; matrix photoreceivers; photoelectrical processes; photorelaxation; spectroselective photocells; thermorelaxation; Annealing; Circuits; Electric potential; Impurities; Ion implantation; MOSFETs; Optical surface waves; Semiconductor diodes; Seminars; Substrates; Photoelectric processes; photo-relaxation; photocells; spectral characteristics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
Type :
conf
DOI :
10.1109/EDM.2009.5174022
Filename :
5174022
Link To Document :
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