• DocumentCode
    2677415
  • Title

    Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions

  • Author

    Denisova, Elena A. ; Khainovskii, Vladimir I. ; Uzdovskii, Valerii V.

  • Author_Institution
    Moscow State Inst. of Electron. Technol., Moscow, Russia
  • fYear
    2009
  • fDate
    1-6 July 2009
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.
  • Keywords
    optical receivers; p-n junctions; photoelectric cells; ISE TCAD program; bulk integrated p-n-junctions; matrix photoreceivers; photoelectrical processes; photorelaxation; spectroselective photocells; thermorelaxation; Annealing; Circuits; Electric potential; Impurities; Ion implantation; MOSFETs; Optical surface waves; Semiconductor diodes; Seminars; Substrates; Photoelectric processes; photo-relaxation; photocells; spectral characteristics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-4571-4
  • Type

    conf

  • DOI
    10.1109/EDM.2009.5174022
  • Filename
    5174022