DocumentCode
2677415
Title
Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions
Author
Denisova, Elena A. ; Khainovskii, Vladimir I. ; Uzdovskii, Valerii V.
Author_Institution
Moscow State Inst. of Electron. Technol., Moscow, Russia
fYear
2009
fDate
1-6 July 2009
Firstpage
391
Lastpage
394
Abstract
Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.
Keywords
optical receivers; p-n junctions; photoelectric cells; ISE TCAD program; bulk integrated p-n-junctions; matrix photoreceivers; photoelectrical processes; photorelaxation; spectroselective photocells; thermorelaxation; Annealing; Circuits; Electric potential; Impurities; Ion implantation; MOSFETs; Optical surface waves; Semiconductor diodes; Seminars; Substrates; Photoelectric processes; photo-relaxation; photocells; spectral characteristics;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-4571-4
Type
conf
DOI
10.1109/EDM.2009.5174022
Filename
5174022
Link To Document