Significant reduction of threshold current density of GaAs/AlGaAs terahertz quantum cascade lasers by using high-al-content AlGaAs barrier

Author

Lin, Tsung-Tse ; Ying, Leiying ; Hirayama, Hideki

Author_Institution

Terahertz Quantum Device Lab., RIKEN, Sendai, Japan

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

The temperature dependent of threshold current density (J_th) of GaAs/Al_xGa_1-xAs terahertz quantum cascade lasers (THz QCLs) with different Al barrier composition are studied and reported here. One of the most important issues of the recent THz QCLs is their limited operation temperature. Increasing the Al composition in longitudinal optical (LO) phonon depopulation design THz QCLs tend to reduce J_th and improve current dynamic range of lasers, which is expected to increase the maximum operation temperature (T_max).

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; quantum cascade lasers; submillimetre wave lasers; Al barrier composition; GaAs-Al_xGa_1-xAs; GaAs/AlGaAs terahertz quantum cascade lasers; high-Al-content AlGaAs barrier; longitudinal optical phonon depopulation; threshold current density; Dynamic range; Gallium arsenide; Phonons; Quantum cascade lasers; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6105198

Filename

6105198