Title :
Highly responsive curved aluminum nitride pMUT
Author :
Akhbari, Sina ; Sammoura, Firas ; Shelton, Stefon ; Chen Yang ; Horsley, David ; Liwei Lin
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
We have successfully demonstrated highly responsive, curved piezoelectric micromachined ultrasonic transducers (pMUTs) based on a CMOS-compatible fabrication process using AlN (aluminum nitride) as the transduction material. Micro fabrication techniques have been used to control the radius of curvature of working diaphragms from 400~2000 μm and theoretical analysis have been developed for the optimal dimensions of the transducers to boost the electromechanical coupling and acoustic pressure. A prototype device made of a 2μm-thick AlN on a curved diaphragm with a nominal size of 140μm in diameter and a radius of curvature of 1065μm has been fabricated. The measured resonant frequency is 2.19MHz and DC response is 1.1nm/V, which is 50X higher than that of a planar device with the same nominal diameter. As such, this new class of curved pMUTs could dramatically enhance the responses of the state-of-art, planar pMUTs with high electromechanical coupling for various ultrasonic transduction applications, such as gesture recognition and medical imaging.
Keywords :
III-V semiconductors; aluminium compounds; microfabrication; microsensors; piezoelectric transducers; ultrasonic transducers; AlN; CMOS compatible fabrication process; DC response; acoustic pressure; curvature radius; curved aluminum nitride pMUT; electromechanical coupling; frequency 2.19 MHz; gesture recognition; medical imaging; microfabrication techniques; piezoelectric micromachined ultrasonic transducers; planar device; resonant frequency; size 140 mum; size 2 mum; size 400 mum to 2000 mum; transducer optimal dimensions; transduction material; ultrasonic transduction applications; working diaphragms; Acoustics; Couplings; Etching; Fabrication; Frequency measurement; III-V semiconductor materials; Resonant frequency;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/MEMSYS.2014.6765589