DocumentCode :
267789
Title :
Ultrasensitive Si nanowire probe for magnetic resonance detection
Author :
Yong-Jun Seo ; Toda, Masayoshi ; Kawai, Yusuke ; Ono, Takahito
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2014
fDate :
26-30 Jan. 2014
Firstpage :
151
Lastpage :
154
Abstract :
In this study, we have fabricated a 210 nm-wide and 32 μm-long Si nanowire probe with a Si mirror from a silicon-on-insulator wafer. Additionally, a Nd-Fe-B magnet is mounteded at the end of the nanowire for magnetic force detection in MRFM measurements. The fabricated probe shows a resonance frequency f0 of 11.256 kHz and a Q factor of 12000 after annealing at 800°C for 2 hours in forming gas. The probe exhibits atto-newton sensitivity, and the measurement of force mapping based on electron spin resonance is demonstrated for three-dimensional imaging of radical density. The detected force is approximately 8.5 aN at room temperature.
Keywords :
annealing; boron; elemental semiconductors; iron; magnetic force microscopy; magnetic resonance imaging; nanowires; neodymium; paramagnetic resonance; silicon-on-insulator; 3D imaging; MRFM measurements; Nd-Fe-B; Si; attonewton sensitivity; electron spin resonance; frequency 11.256 kHz; magnetic force detection; magnetic resonance detection; radical density; silicon-on-insulator wafer; size 210 nm; size 32 mum; temperature 800 degC; time 2 hour; ultrasensitive nanowire probe; Force; Magnetic resonance; Magnetic resonance imaging; Magnetic separation; Probes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/MEMSYS.2014.6765596
Filename :
6765596
Link To Document :
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