Title :
Direct modulation of THz-oscillating resonant tunneling diodes
Author :
Ishigaki, K. ; Karashima, K. ; Shiraishi, M. ; Shibayama, H. ; Suzuki, S. ; Asada, M.
Author_Institution :
Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Direct intensity modulation of THz-oscillating resonant tunneling diodes (RTDs) with bias voltage is demonstrated. 3 dB cutoff frequency of the modulation was 4.5 GHz for an RTD at 717 GHz, in reasonable agreement with calculation. The cutoff frequency is limited at present by external parasitic elements, and can be increased by their reduction.
Keywords :
intensity modulation; resonant tunnelling diodes; submillimetre wave oscillators; THz-oscillating resonant tunneling diode; cutoff frequency; direct intensity modulation; direct modulation; Capacitance; Cutoff frequency; Frequency modulation; Oscillators; Power generation; Wires;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105212
