• DocumentCode
    2677962
  • Title

    Direct modulation of THz-oscillating resonant tunneling diodes

  • Author

    Ishigaki, K. ; Karashima, K. ; Shiraishi, M. ; Shibayama, H. ; Suzuki, S. ; Asada, M.

  • Author_Institution
    Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Direct intensity modulation of THz-oscillating resonant tunneling diodes (RTDs) with bias voltage is demonstrated. 3 dB cutoff frequency of the modulation was 4.5 GHz for an RTD at 717 GHz, in reasonable agreement with calculation. The cutoff frequency is limited at present by external parasitic elements, and can be increased by their reduction.
  • Keywords
    intensity modulation; resonant tunnelling diodes; submillimetre wave oscillators; THz-oscillating resonant tunneling diode; cutoff frequency; direct intensity modulation; direct modulation; Capacitance; Cutoff frequency; Frequency modulation; Oscillators; Power generation; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6105212
  • Filename
    6105212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2677962