DocumentCode
2678003
Title
CW InP Gunn Diode Power Combining at 90 GHz
Author
Sowers, J.J. ; Crowley, J.D. ; Fank, F.B.
fYear
1982
fDate
15-17 June 1982
Firstpage
503
Lastpage
505
Abstract
CW power combining of two, three, or four InP Gunn devices has been achieved at 90 GHz. Diodes were first characterized in individual radial line circuit modules. Modules with similar operating characteristics were stacked in-line to form power combining units. Greater than 1/4 watt was obtained from four InP diodes.
Keywords
Circuits; Diodes; Gallium arsenide; Gunn devices; Heat sinks; Indium phosphide; Millimeter wave devices; Millimeter wave technology; Packaging; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130771
Filename
1130771
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