DocumentCode
2678038
Title
High Frequency Limitation Of GaAs Transit-Time Diodes
Author
Lee, N. ; Dee-Son Pan
fYear
1982
fDate
15-17 June 1982
Firstpage
513
Lastpage
515
Abstract
The high-frequency capabilities of GaAs transit-time diodes have been investigated by extensive computer simulations. The spatial effect of interband tunneling and impact ionization were included. We have found GaAs diodes can operate with significant efficiency, approximately 5% in the millimeter and sub-millimeter frequency range. These results are in agreement with a recent report of a 338 GHz GaAs TUNNETT.
Keywords
Charge carrier processes; Computational modeling; Computer simulation; Diodes; Equations; Frequency; Gallium arsenide; Impact ionization; Millimeter wave devices; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130774
Filename
1130774
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