Title :
Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity
Author :
Kirley, Matt ; Yang, Ben ; Willis, Keely ; Weber, Marcus ; Sule, Nishant ; Hagness, Susan ; Knezevic, Irena ; Booske, John
Author_Institution :
ECE Dept., Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.
Keywords :
Q-factor; cavity resonators; electrical conductivity; elemental semiconductors; high-frequency effects; silicon; Drude model; Si; UW-Madison model; doped silicon; frequency 400 GHz; frequency 650 GHz; high quality factor resonant cavity; multiphysics computational model; semiconfocal resonant cavity; terahertz conductivity measurements; Conductivity; Conductivity measurement; Predictive models; Semiconductor device measurement; Semiconductor device modeling; Semiconductor process modeling; Silicon;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105218
