Title :
Integration of diamond microelectrodes on CMOS-based amperometric biosensor array by film transfer technology
Author :
Hayasaka, Takeshi ; Yoshida, Sigeru ; Inoue, Kumi Y. ; Nakano, M. ; Ishikawa, Takaaki ; Matsue, Tomokazu ; Esashi, Masayoshi ; Tanaka, Shoji
Author_Institution :
Tohoku Univ., Sendai, Japan
Abstract :
This paper reports a complementary metal oxide semiconductor (CMOS)-based 20×20 amperometric biosensor array using boron-doped diamond (BDD) microelectrodes with excellent electrochemical properties. The BDD electrodes were once formed on a Si wafer at 800°C, and then transferred to a 0.18 μm CMOS wafer with a benzocyclobutene (BCB) bonding interlayer. As a result, the BDD microelectrodes were arrayed without damage in the CMOS LSI circuit. The fully-integrated device could detect histamine and dopamine owing to a wide potential window of the BDD electrode, and offered 2-dimensional real-time imaging of histamine diffusion in a solution.
Keywords :
CMOS image sensors; amperometric sensors; biodiffusion; biomedical electrodes; biomedical imaging; biosensors; boron; diamond; microelectrodes; organic compounds; silicon; 2-dimensional real-time imaging; BCB; BDD microelectrodes; C:B; CMOS LSI circuit; CMOS wafer; CMOS-based amperometric biosensor array; Si; Si wafer; benzocyclobutene bonding interlayer; boron-doped diamond microelectrodes; complementary metal oxide semiconductor-based amperometric biosensor array; dopamine detection; electrochemical properties; film transfer technology; fully-integrated device; histamine detection; histamine diffusion; size 0.18 mum; temperature 800 degC; Arrays; Boolean functions; Electrodes; Large scale integration; Silicon; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/MEMSYS.2014.6765641