Distortion analysis of a power heterojunction FET under low quiescent drain current for 3.5 V wide-band CDMA cellular phones

Author

Hau, G. ; Nishimura, T.B. ; Iwata, N.

Author_Institution

Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan

fYear

1999

fDate

21-24 Feb. 1999

Firstpage

37

Lastpage

40

Abstract

The dependence of adjacent channel leakage power ratio (ACPR) of a heterojunction FET (HJFET) on quiescent drain current (I/sub q/) for wide-band CDMA (W-CDMA) cellular phones application is presented. Measured performance demonstrates an ACPR dip phenomenon under a low I/sub q/ condition resulting in a significant improvement on the power added efficiency of the HJFET with the ACPR maintained within the specification. It is found that the W-CDMA ACPR characteristic mainly correlates to the third-order intermodulation (IM/sub 3/) distortion of the HJFET. The ACPR dip arises from a similar characteristic on the IM/sub 3/ distortion under a low I/sub q/ operation.

Keywords

JFET circuits; UHF field effect transistors; cellular radio; code division multiple access; intermodulation distortion; power field effect transistors; telephone sets; 1.95 GHz; 3.5 V; HJFET; UHF; adjacent channel leakage power ratio; distortion analysis; low quiescent drain current; measured performance; power added efficiency; power heterojunction FET; third-order intermodulation distortion; wide-band CDMA cellular phones; Cellular phones; Distortion measurement; FETs; Heterojunctions; Intermodulation distortion; Laboratories; Multiaccess communication; Power measurement; Semiconductor device measurement; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on

Conference_Location

Vancouver, BC, Canada

Print_ISBN

0-7803-5152-5

Type

conf

DOI

10.1109/MTTTWA.1999.755125

Filename

755125