Properties of Silicon Carbide nanotubes formed via reaction of SiO powder with SWCNTs and MWCNTs

Experiments to synthesize Silicon Carbide (SiC) nanotubes using single walled carbon nanotubes (SWCNTs) and multi-walled carbon nanotubes (MWCNTs) were preformed. Several experiments were conducted under vacuum in a high-temperature furnace varying temperature (1300degC-1450degC) and time. The optimal factors in synthesizing SiC nanostructures with MWCNTs were setting the dwell time to 6 hrs at 1450degC. While the optimal factor with SWCNTs was setting the dwell time to 30 mins at 1450degC. In general, samples were calcinated for 30 mins in 750degC. In both experiments, X-ray diffraction (XRD) patterns indicate our predominant polytype of SiC formed was 3C-SiC. Transmission electron microscopy (TEM) of our 6 hr experiment shows SiC nanostructures with polycrystalline layers and exhibiting a unique disk stacking structure. Scanning electron microscopy (SEM) of our 30 min experiment show fibrous and long nanotubes in which TEM and energy dispersive spectroscopy (EDS) indicate to be grains of SiC.