Title :
Wideband High Gain Small Size Monolithic GaAs FET Amplifiers
Author :
Pauker, V. ; Binet, M.
fDate :
May 31 1983-June 3 1983
Abstract :
A series of two to four stage monolithic amplifiers operating with a gain of 15 to 42 dB and covering the 0.1 to 2 till 4 GHz frequency band has been realized. A high density of integration has been achieved (active area of 0.2 mm²) as no decoupling capacitors nor inductance have been used.
Keywords :
Broadband amplifiers; Capacitance; Capacitors; Coupling circuits; FETs; Feedback; Frequency conversion; Gallium arsenide; Impedance matching; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130808
