Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: Determination of the optimal substrate and pattern orientation

Author

Tassev, V. ; Snure, M. ; Peterson, R. ; Bliss, D. ; Bryant, G. ; Goodhue, W. ; Vangala, S. ; Termkoa, K. ; Lin, A. ; Harris, J.S. ; Fejer, M.M. ; Yapp, C.

Author_Institution

Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

Halide vapor phase epitaxial growth of GaP was performed on GaP half- and orientation - patterned templates. This allowed optimization of substrate material, patterning approach and pattern orientation, which resulted in growth of +350 μm thick quasi-phase matched GaP with successful replication of the initial patterns.

Keywords

III-V semiconductors; gallium compounds; infrared spectra; optimisation; semiconductor epitaxial layers; semiconductor growth; terahertz wave spectra; vapour phase epitaxial growth; GaP; MIR applications; THz applications; halide vapor phase epitaxial growth; infrared spectra; optimal substrate; optimization; pattern orientation; terahertz spectra; thick quasiphase matched materials; Absorption; Epitaxial growth; Frequency conversion; Gallium arsenide; Nonlinear optics; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6105245

Filename

6105245