Inductively coupled plasma etching of bulk tungsten for MEMS applications

Author

Lu Song ; Nannan Li ; Shibin Zhang ; Jin Luo ; Jia Hu ; Yiming Zhang ; Shuhui Chen ; Jing Chen

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2014

fDate

26-30 Jan. 2014

Firstpage

502

Lastpage

505

Abstract

Tungsten based MEMS devices have the potential to be used for many applications, such as tools for micro electrical discharge machining and ultrasonic machining, or mold for inject molding. For the first time, bulk tungsten inductively coupled plasma (ICP) etching was developed and characterized, which is capable of producing high aspect ratio (>13) structures with feature size below 3μm. Etching depth of 230μm has been achieved at an etch rate up to 2.2μm/min. This technology offers big opportunities for MEMS applications.

Keywords

micromechanical devices; sputter etching; bulk tungsten ICP etching; bulk tungsten inductively coupled plasma etching; etching depth; high-aspect ratio structure production; inject molding; microelectrical discharge machining; tungsten-based MEMS devices; ultrasonic machining; Etching; Iterative closest point algorithm; Radio frequency; Rough surfaces; Surface roughness; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/MEMSYS.2014.6765687

Filename

6765687