A C-band low noise amplifier for satellite communications

Author

Benboudjema, K. ; Swarup, A. ; Ali, K.

Author_Institution

Com Dev Space Group, Cambridge, Ont., Canada

fYear

1999

fDate

21-24 Feb. 1999

Firstpage

157

Lastpage

160

Abstract

A hybrid C-band low noise amplifier (LNA) has been developed for satellite communication applications, using a pseudomorphic HEMT technology with a gate-length of 0.25 /spl mu/m. The three-stage LNA has achieved, a noise figure of 1.9 dB with an associated gain of 24.5 dB at ambient room temperature over a 3.7-4.2 GHz frequency range. The output third order intercept point [1P3] of 18.5 dBm was obtained with the two tone spacing of 5 MHz. The amplifier dissipates 95 mW from a 2 V supply.

Keywords

HEMT integrated circuits; microwave amplifiers; microwave field effect transistors; microwave integrated circuits; satellite communication; 0.25 micron; 1.9 dB; 2 V; 24.5 dB; 3.7 to 4.2 GHz; 96 mW; ambient room temperature; frequency range; gain; gate-length; hybrid C-band low noise amplifier; noise figure; output third order intercept point; pseudomorphic HEMT technology; satellite communications; supply voltage; three-stage LNA; two tone spacing; Frequency; Gain measurement; Inductors; Low-noise amplifiers; Noise figure; Noise measurement; PHEMTs; Satellite communication; Space technology; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on

Conference_Location

Vancouver, BC, Canada

Print_ISBN

0-7803-5152-5

Type

conf

DOI

10.1109/MTTTWA.1999.755155

Filename

755155