Moisture resistant aluminum nitride filler for high thermal conductivity microelectronic molding compounds

Author

Howard, K.E. ; Anderson, Stasia A.

fYear

1996

fDate

28-31 May 1996

Firstpage

335

Lastpage

342

Abstract

A patented moisture resistant aluminum nitride filler has been developed for use in high thermal conductivity microelectronic molding compounds. Molding compounds based on biphenyl resin and using this filler show high thermal conductivity (4.5 W/mK), low coefficient of thermal expansion (16 ppm /°C), good flowability, high strength, moderate abrasion, and device reliability comparable to standard fused silica systems. Finite Element Analysis of a TO220 device using transient thermal stress shows approximately a 41% and 64% reduction respectively for Theta ja and Theta jc, assuming an aluminum nitride molding compound of 3.2 W/mK. Experimental thermal measurements on a 208 lead PQFP (no heat sink) molded with an ECN based molding compound (3.4 W/mK) yielded a 21% reduction in Theta ja and a 61% reduction in Theta jc

Keywords

aluminium compounds; filled polymers; finite element analysis; integrated circuit packaging; integrated circuit reliability; mechanical strength; thermal conductivity; thermal expansion; thermal stresses; AlN; ECN based compound; PQFP; abrasion; biphenyl resin; coefficient of thermal expansion; device reliability; finite element analysis; flowability; mechanical strength; microelectronic molding compounds; moisture resistant filler; thermal conductivity; transient thermal stress; Aluminum nitride; Finite element methods; Microelectronics; Moisture; Resins; Silicon compounds; Thermal conductivity; Thermal expansion; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1996. Proceedings., 46th

Conference_Location

Orlando, FL

ISSN

0569-5503

Print_ISBN

0-7803-3286-5

Type

conf

DOI

10.1109/ECTC.1996.517410

Filename

517410