High-performance low-cost indium phosphide MMICs for commercial wireless applications

Author

Streit, D. ; Oki, A. ; Lai, R. ; Medvedev, V. ; Kobayashi, K.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

21-24 Feb. 1999

Firstpage

253

Lastpage

256

Abstract

We describe a high-volume InP-based HEMT and HBT production line that produces both monolithic microwave and millimeter-wave circuits for wireless applications. Products as diverse as 900 MHz InP HBT cellular power amplifiers and 155 GHz InP HEMT low noise amplifiers are manufactured on the same fab line, modeled after our successful GaAs HEMT and HBT fab line. These products have found acceptance in both high volume commercial wireless applications as well as more specialized millimeter wave applications.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; field effect MIMIC; indium compounds; integrated circuit manufacture; 155 GHz; 900 MHz; HBT cellular power amplifiers; HEMT low noise amplifiers; InP; InP-based HBT production line; InP-based HEMT production line; MMIC; commercial wireless applications; high-performance circuits; low-cost circuits; millimeter-wave circuits; monolithic microwave; Circuit noise; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave circuits; Production; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on

Conference_Location

Vancouver, BC, Canada

Print_ISBN

0-7803-5152-5

Type

conf

DOI

10.1109/MTTTWA.1999.755171

Filename

755171