Title :
High-performance low-cost indium phosphide MMICs for commercial wireless applications
Author :
Streit, D. ; Oki, A. ; Lai, R. ; Medvedev, V. ; Kobayashi, K.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We describe a high-volume InP-based HEMT and HBT production line that produces both monolithic microwave and millimeter-wave circuits for wireless applications. Products as diverse as 900 MHz InP HBT cellular power amplifiers and 155 GHz InP HEMT low noise amplifiers are manufactured on the same fab line, modeled after our successful GaAs HEMT and HBT fab line. These products have found acceptance in both high volume commercial wireless applications as well as more specialized millimeter wave applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; field effect MIMIC; indium compounds; integrated circuit manufacture; 155 GHz; 900 MHz; HBT cellular power amplifiers; HEMT low noise amplifiers; InP; InP-based HBT production line; InP-based HEMT production line; MMIC; commercial wireless applications; high-performance circuits; low-cost circuits; millimeter-wave circuits; monolithic microwave; Circuit noise; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave circuits; Production; Virtual manufacturing;
Conference_Titel :
Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-5152-5
DOI :
10.1109/MTTTWA.1999.755171
