DocumentCode
2679090
Title
A 60 GHz GaAs FET Amplifier
Author
Watkins, E.T. ; Schellenberg, J.M. ; Hackett, L.H. ; Yamasaki, H. ; Feng, M.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
145
Lastpage
147
Abstract
Using a 1/4 µm gate structure, a new millimeter wave FET device has been developed. This device, in a waveguide/MIC amplifier circuit, has demonstrated gains of 5.0 +-0.5 dB from 55 to 62 GHz with a minimum noise figure of 7.1 dB at 60 GHz.
Keywords
Broadband amplifiers; Circuit noise; Electrical resistance measurement; FETs; Gain measurement; Gallium arsenide; Impedance; Microwave integrated circuits; Noise figure; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130838
Filename
1130838
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