DocumentCode :
2679098
Title :
Detecting stability faults in sub-threshold SRAMs
Author :
Lin, Chen-Wei ; Yang, Hao-Yu ; Huang, Chin-Yuan ; Chen, Hung-Hsin ; Chao, Mango C -T
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
7-10 Nov. 2011
Firstpage :
28
Lastpage :
33
Abstract :
Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.
Keywords :
SRAM chips; integrated circuit design; integrated circuit reliability; integrated circuit testing; bit-cell structures; stability fault detection; stability-fault test methods; subthreshold SRAM design; superthreshold 6T SRAM; Circuit stability; Inverters; MOSFETs; Random access memory; Resistance; Stability analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4577-1399-6
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2011.6105301
Filename :
6105301
Link To Document :
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