• DocumentCode
    2679233
  • Title

    The Effects of Varying Tilt Angle of Halo Implant on the Performance of Sub 100nm LAC MOSFETs

  • Author

    Sarkar, Pradyut ; Mallik, Abhijit ; Sarkar, Chandan K. ; Rao, V. Ramgopal

  • Author_Institution
    Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Calcutta
  • fYear
    2006
  • fDate
    8-11 Aug. 2006
  • Firstpage
    115
  • Lastpage
    118
  • Abstract
    In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on/Ioff, and lower junction capacitance
  • Keywords
    MOSFET; ion implantation; semiconductor device models; 100 nm; LACLATI; MOSFET; halo implant; large angle tilt implant; lateral asymmetric channel; reverse short channel effect; twist angle; Capacitance; Communication industry; Educational institutions; Electronics industry; Implants; Industrial electronics; Information systems; Los Angeles Council; MOSFETs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial and Information Systems, First International Conference on
  • Conference_Location
    Peradeniya
  • Print_ISBN
    1-4244-0322-7
  • Type

    conf

  • DOI
    10.1109/ICIIS.2006.365647
  • Filename
    4216567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2679233