Title :
ALN-based piezoelectric resonator for infrared sensing application
Author :
Ang, W.C. ; Kropelnicki, Piotr ; Campanella, Humberto ; Yao Zhu ; Randles, A.B. ; Hong Cai ; Gu, Yuandong Alex ; Leong, K.C. ; Tan, C.S.
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Abstract :
This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S21 magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 × 107 cm√Hz/W, respectively.
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; gallium compounds; infrared detectors; wide band gap semiconductors; AlN; AlN-based piezoelectric resonator; IR illumination; ambient measurements; frequency 2.336 GHz; highly sensitive aluminum nitride based resonant uncooled infrared detector; infrared sensing application; magnitude shift; photo-sensitive properties; piezoelectric properties; polycrystalline AlN; quality factor; vacuum measurements; Detectors; Frequency measurement; III-V semiconductor materials; Resonant frequency; Silicon; Temperature measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/MEMSYS.2014.6765734
