ALN-based piezoelectric resonator for infrared sensing application

Author

Ang, W.C. ; Kropelnicki, Piotr ; Campanella, Humberto ; Yao Zhu ; Randles, A.B. ; Hong Cai ; Gu, Yuandong Alex ; Leong, K.C. ; Tan, C.S.

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore

fYear

2014

fDate

26-30 Jan. 2014

Firstpage

688

Lastpage

691

Abstract

This paper reports a highly sensitive aluminum nitride (AlN) based resonant uncooled infrared (IR) detector utilizing photo-sensitive and piezoelectric properties of polycrystalline AlN. The design, fabrication, and IR sensing characterization of the device are presented. Instead of resonant frequency shift, S₂₁ magnitude shift was observed upon IR illumination under both vacuum and ambient measurements. Thus, photoresponse mechanism was proposed rather than thermal effect. An AlN resonator operating at 2.336 GHz with a quality factor (Q) of 830 exhibits an IR responsivity and detectivity of 166 kdB/W and 1.41 × 10⁷ cm√Hz/W, respectively.

Keywords

III-V semiconductors; aluminium compounds; crystal resonators; gallium compounds; infrared detectors; wide band gap semiconductors; AlN; AlN-based piezoelectric resonator; IR illumination; ambient measurements; frequency 2.336 GHz; highly sensitive aluminum nitride based resonant uncooled infrared detector; infrared sensing application; magnitude shift; photo-sensitive properties; piezoelectric properties; polycrystalline AlN; quality factor; vacuum measurements; Detectors; Frequency measurement; III-V semiconductor materials; Resonant frequency; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/MEMSYS.2014.6765734

Filename

6765734