Title :
Investigation of device low frequency noise in 28 GHz MMIC VCO
Author :
Kozhuharov, Rumen ; Sakalas, Paulius ; Zirath, Herbert
Author_Institution :
Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
This paper reports on the LF noise spectra for 0.2 μm gate length GaAs HEMTs based on a combined enhancement/depletion process manufactured by Philips Microwave Limeil ED02AH. The LF noise is used for an extended large signal model of the transistor implemented in a 28 GHz MMIC VCO. Flicker noise and g-r related noise are included in the phase noise simulation and thus the oscillator phase noise calculations, considering the all important LF noise contributions, are taken into account. The results show that the LF noise (1 kHz -100 kHz) being upconverted controls the phase noise performance of AlGaAs-GaAs HEMT oscillators
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; field effect MMIC; flicker noise; gallium arsenide; integrated circuit design; integrated circuit modelling; integrated circuit noise; microwave field effect transistors; phase noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; voltage-controlled oscillators; 0.2 micron; 1 to 100 kHz; 28 GHz; AlGaAs-GaAs; GaAs HEMTs; HEMT oscillators; LF noise spectra; MMIC VCO; Philips Microwave Limeil ED02AH; combined enhancement/depletion process; device LF noise; extended large signal model; flicker noise; g-r related noise; low frequency noise; oscillator phase noise calculations; phase noise simulation; transistor model; 1f noise; Gallium arsenide; HEMTs; Low-frequency noise; MMICs; MODFETs; Manufacturing processes; Phase noise; Pulp manufacturing; Voltage-controlled oscillators;
Conference_Titel :
Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International
Conference_Location :
Kansas City, MO
Print_ISBN :
0-7803-5838-4
DOI :
10.1109/FREQ.2000.887416
