• DocumentCode
    2679326
  • Title

    Design-oriented model for nonlinearities in MOSFETs

  • Author

    da Silva, P.D. ; Galup-Montoro, C. ; Schneider, M.C. ; de Sousa, F.Rangel

  • Author_Institution
    Dept. of Electr. Eng., Fed. Univ. of Santa Catarina, Florianopolis
  • fYear
    2008
  • fDate
    22-25 June 2008
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    In this paper we propose a design-oriented model for nonlinearities in short channel MOS transistors. We show that it is possible to achieve a fair accuracy in the third derivative of the drain current for short channel devices, taking into account the velocity saturation effect.
  • Keywords
    MOSFET; semiconductor device models; MOSFET; design-oriented model; short channel MOS transistors; CMOS technology; Circuits; Distortion measurement; Frequency estimation; Linearity; MOSFETs; Nonlinear distortion; Nonlinear equations; Radio frequency; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008 Joint 6th International IEEE Northeast Workshop on
  • Conference_Location
    Montreal, QC
  • Print_ISBN
    978-1-4244-2331-6
  • Electronic_ISBN
    978-1-4244-2332-3
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2008.4606344
  • Filename
    4606344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2679326