Title :
Design-oriented model for nonlinearities in MOSFETs
Author :
da Silva, P.D. ; Galup-Montoro, C. ; Schneider, M.C. ; de Sousa, F.Rangel
Author_Institution :
Dept. of Electr. Eng., Fed. Univ. of Santa Catarina, Florianopolis
Abstract :
In this paper we propose a design-oriented model for nonlinearities in short channel MOS transistors. We show that it is possible to achieve a fair accuracy in the third derivative of the drain current for short channel devices, taking into account the velocity saturation effect.
Keywords :
MOSFET; semiconductor device models; MOSFET; design-oriented model; short channel MOS transistors; CMOS technology; Circuits; Distortion measurement; Frequency estimation; Linearity; MOSFETs; Nonlinear distortion; Nonlinear equations; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008 Joint 6th International IEEE Northeast Workshop on
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2331-6
Electronic_ISBN :
978-1-4244-2332-3
DOI :
10.1109/NEWCAS.2008.4606344
