Title :
Experimentally validated aluminum nitride based pressure, temperature and 3-axis acceleration sensors integrated on a single chip
Author :
Goericke, Fabian ; Mansukhani, Kirti ; Yamamoto, Koji ; Pisano, Alessandro
Author_Institution :
Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
This paper reports a unified fabrication process used to build multiple Aluminum Nitride (AlN) based micro-electromechanical system (MEMS) sensors on a single chip. A fully functional AlN-based sensor cluster has been demonstrated and is presented in this paper. This sensor cluster is a “five degree-of-freedom” cluster; it measures 3-axis acceleration, temperature and pressure fabricated on a 1 cm × 1 cm die. In addition to utilizing AlN as both the structural and active layer of the sensors, this work is novel because all sensors are fabricated in the same fabrication run.
Keywords :
III-V semiconductors; acceleration measurement; aluminium compounds; microfabrication; microsensors; pressure measurement; pressure sensors; system-on-chip; temperature measurement; temperature sensors; wide band gap semiconductors; 3 axis acceleration sensors; AlN; MEMS sensors; acceleration measurement; degree of freedom cluster; fabrication process; functional AlN-based sensor cluster; microelectromechanical system; pressure measurement; pressure sensors; single chip; temperature measurement; temperature sensors; Fabrication; III-V semiconductor materials; Sensitivity; Silicon; Temperature measurement; Temperature sensors;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/MEMSYS.2014.6765744
