DocumentCode :
2679486
Title :
Toward efficient spatial variation decomposition via sparse regression
Author :
Zhang, Wangyang ; Balakrishnan, Karthik ; Li, Xin ; Boning, Duane ; Rutenbar, Rob
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
2011
fDate :
7-10 Nov. 2011
Firstpage :
162
Lastpage :
169
Abstract :
In this paper, we propose a new technique to accurately decompose process variation into two different components: (1) spatially correlated variation, and (2) uncorrelated random variation. Such variation decomposition is important to identify systematic variation patterns at wafer and/or chip level for process modeling, control and diagnosis. We demonstrate that spatially correlated variation carries a unique sparse signature in frequency domain. Based upon this observation, an efficient sparse regression algorithm is applied to accurately separate spatially correlated variation from uncorrelated random variation. An important contribution of this paper is to develop a fast numerical algorithm that reduces the computational time of sparse regression by several orders of magnitude over the traditional implementation. Our experimental results based on silicon measurement data demonstrate that the proposed sparse regression technique can capture spatially correlated variation patterns with high accuracy. The estimation error is reduced by more than 3.5× compared to other traditional methods.
Keywords :
CMOS integrated circuits; computational complexity; electronic engineering computing; regression analysis; semiconductor industry; computational time; process variation; sparse regression; spatial variation decomposition; systematic variation patterns; unique sparse signature; Algorithm design and analysis; Computational efficiency; Discrete cosine transforms; Matching pursuit algorithms; Semiconductor device measurement; Systematics; Vectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4577-1399-6
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2011.6105321
Filename :
6105321
Link To Document :
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