Title :
A Theory for the Prediction of GaAs FET Load-Pull Power Contours
fDate :
May 31 1983-June 3 1983
Abstract :
A theory is presented which is capable of predicting the power load-pull contours of a GaAs FET in a convenient mathematical formulation. Although based on some initial simplifying assumptions, the predicted contours are shown to be in good agreement with experimental measurements.
Keywords :
FETs; Gallium arsenide; Impedance measurement; Microwave frequencies; Noise generators; Power generation; Power measurement; Solid state circuits; Tuners; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130864
