DocumentCode
2679693
Title
Hybrid CMOS/Magnetic Process Design Kit and application to the design of high-performances non-volatile logic circuits
Author
Prenat, Guillaume ; Dieny, Bernard ; Nozieres, Jean-Pierre ; DiPendina, Gregory ; Torki, Kholdoun
Author_Institution
Spintec, CEA/INAC, Grenoble, France
fYear
2011
fDate
7-10 Nov. 2011
Firstpage
240
Lastpage
245
Abstract
Spintronics (or spin-electronics) is a continuously expending area of research and development at the merge between magnetism and electronics. It aims at taking advantage of the quantum characteristic of the electrons, i.e. its spin, to create new functionalities and new devices. Spintronic devices comprise magnetic layers which serve as spin polarizers or analyzers separated by non-magnetic layers through which the spin-polarized electrons are transmitted. Typically, they rely on the Magneto Resistive (MR) effects, which consists in a dependence of the electrical resistance upon the magnetic configuration. These devices can be used to conceive innovative non-volatile memories, high-perfomances logic circuits, RF oscillators or field/current sensors. This paper describes a full Magnetic Process Design Kit (MPDK) allowing to efficiently design such CMOS/magnetic hybrid circuits. The latter can help circumventing some of the limits of CMOS-only microelectronics.
Keywords
CMOS logic circuits; magnetic circuits; magnetoelectronics; radiofrequency oscillators; random-access storage; CMOS-only microelectronics; RF oscillator; Spintronic device; current sensor; electron quantum characteristics; high-performance nonvolatile logic circuit; hybrid CMOS-magnetic process design kit; innovative nonvolatile memory; magnetic configuration; magnetic layer; magneto resistive effect; nonmagnetic layer; spin-polarized electron; CMOS integrated circuits; Magnetic circuits; Magnetic tunneling; Magnetization; Nonvolatile memory; Switches; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4577-1399-6
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2011.6105334
Filename
6105334
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