Title :
A 6-GHz 80-W GaAs FET Amplifier with TM-Mode Cavity Power Combiner
Author :
Okubo, N. ; Kaneko, Y. ; Saito, T. ; Tokumitsu, Y.
fDate :
May 31 1983-June 3 1983
Abstract :
A novel 8-way divider/combiner using TM010- and TM020-mode cavities was developed, with an insertion loss of 0.2 dB and a bandwidth of 600 MHz at 6 GHz. An 80-W broadband GaAs FET amplifier with combining efficiency of 85 percent was successfully demonstrated using this power divider/combiner.
Keywords :
Bandwidth; Broadband amplifiers; FETs; Gallium arsenide; Insertion loss; Power amplifiers; Power combiners; Power dividers; Power generation; Resonance;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130883
