DocumentCode :
2679875
Title :
Doppler: DPL-aware and OPC-friendly gridless detailed routing with mask density balancing
Author :
Yen-Hung Lin ; Yong-Chan Ban ; Pan, D.Z. ; Yih-Lang Li
fYear :
2011
fDate :
7-10 Nov. 2011
Firstpage :
283
Lastpage :
289
Abstract :
The printed image of a layout that satisfies the double patterning lithograph (DPL) constraints may not have good fidelity if the layout neglects optical proximity correction (OPC). Simultaneously considering DPL and OPC becomes necessary when gene rating layouts, especially in routing stage. Moreover, one decomposed design with balanced mask density has a lower edge placement error (EPE)than an unbalance done[6]. This work proposes a comprehensive conflict graph (CCG)to enable detailed routers to simultaneously consider DPL, OPC, and mask density to gene rate litho-friendly layouts. This work then develops an DPL-aware and OPC-friendly gridless detailed routing (DOPPLER) by applying CCG in a gridless routing model. A density variation threshold annealing-based routing flow is also proposed to prevent DOPPLER from falling into a sub-optimal mask density balance. Compared with existing DPL-aware detailed routing works, DOPPLER demonstrates an average 73.84% of EPE hotspot reduction with a satisfactory mask density at the cost of an average increase of 0.08% wire-length, 15.14% number of stitches, and 77.28% runtime.
Keywords :
circuit layout; graph theory; masks; network routing; photolithography; proximity effect (lithography); DOPPLER; OPC-friendly gridless detailed routing; comprehensive conflict graph; density variation threshold annealing-based routing flow; double patterning lithograph constraints; edge placement error hotspot reduction; gridless routing model; litho-friendly layout rating; mask density balancing; optical proximity correction; Annealing; Color; Doppler effect; Interference; Layout; Routing; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4577-1399-6
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2011.6105343
Filename :
6105343
Link To Document :
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